CM200DY-12NF and fifth-generation power MOSFET

#CM200DY-12NF Mitsubishi CM200DY-12NF New CM200DY-12NF Module Transistor N Channel 200A, 600V, 650W, Module; CM200DY-12NF , CM200DY-12NF pictures, CM200DY-12NF price, #CM200DY-12NF supplier.

Pennsylvania, MALVERN — May 25, 2021 — A few days ago, Vishay Intertechnology, Inc. (NYSE stock code: VSH) launched a new multifunctional 30 V n-channel TrenchFET® fifth-generation power MOSFET — SiSS52DN, which improves isolation and non-isolation topologies Structural power density and energy efficiency. Vishay Siliconix SiSS52DN uses a thermally enhanced 3.3 mm x 3.3 mm PowerPAK® 1212–8S package, with an on-resistance of only 0.95 mW at 10 V, which is 5% lower than the previous generation. In addition, the on-resistance of the device under 4.5 V conditions is 1.5 mW, and the product of on-resistance and gate charge under 4.5 V conditions, that is, the important figure of merit (FOM) for MOSFET switching applications is 29.8 mW*nC, which is the best value on the market One of the products with the lowest coefficient.

The FOM of SiSS52DN is 29% lower than that of previous generation devices, which reduces conduction and switching losses and saves energy for power conversion applications.

SiSS52DN is suitable for synchronous rectification, synchronous step-down converters, DC/DC converters, switch cabinet topologies, OR-ring FET low-side switches, and load switching of power supplies for servers, communications and RF equipment. MOSFETs can improve the performance of isolated and non-isolated topologies, simplifying the designer’s device selection for the two circuits.

The device is 100% RG and UIS tested, RoHS compliant and halogen-free.

SiSS52DN can now provide samples and has achieved mass production, with a lead time of 12 weeks.

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